Shape selective growth of CdS one-dimensional nanostructures by a thermal evaporation process
Shape selective growth of CdS one-dimensional nanostructures by a thermal evaporation process
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DOI：
10.1021/jp056058n
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发表时间：
2006-03-16
影响因子：
3.3
通讯作者：
Chaudhuri, S
中科院分区：
文献类型：
--
作者：
Kar, S;Chaudhuri, S
通过简单的热蒸发路线在Si衬底上形成US一维纳米形式，例如纳米线、纳米带、网状纳米线、珍珠项链型纳米线、螺旋状纳米线和纳米线阵列。通过改变实验参数如衬底的温度和位置来控制一维US纳米形状。美国一维纳米形状的形成是由Art催化的气-液-固技术发起的，而气-固过程在定义纳米形状中起着至关重要的作用。采用不同的光学表征，如光吸收，光致发光，和拉曼光谱，探索这些US纳米的物理和结构质量。
US one-dimensional nanoforms such as nanowires, nanoribbons, networklike nanowires, pearl necklace type nanowires, helical-like nanowires, and nanowire arrays were formed on Si substrates by a simple thermal evaporation route. The shapes of the one-dimensional US nanoforms were controlled by varying the experimental parameters such as temperature and position of the substrates. Formation of the US one-dimensional nanoforms was initiated by the Art catalyzed vapor-liquid-solid technique, whereas the vapor-solid process played a crucial role in defining the shapes of the nanoforms. Different optical characterizations such as optical absorbance, photoluminescence, and Raman spectroscopy were adopted to explore the physical and structural quality of these US nanoforms.