New semiconductor alloy GaNAsBi with temperature‐insensitive bandgap
New semiconductor alloy GaNAsBi with temperature‐insensitive bandgap
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DOI：
10.1002/pssb.200565270
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发表时间：
2006-06
期刊：
影响因子：
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通讯作者：
M. Yoshimoto;Wei Huang;G. Feng;K. Oe
中科院分区：
文献类型：
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作者：
M. Yoshimoto;Wei Huang;G. Feng;K. Oe
采用分子束外延（MBE）生长了GaNyAs 1-x-yBix合金。证实了N和Bi原子的成功掺入，并通过卢瑟福背散射光谱（RBS）和二次离子质谱（西姆斯）评估了它们的浓度。在10-300 K的温度范围内观察到单峰光致发光（PL）光谱。GaNyAs 1-x-yBix合金的PL峰能量随着GaBi和GaN摩尔分数的增加而降低，室温下的红移系数分别为~ 62 meV/%Bi和~ 130 meV/%N。在150-300 K的温度范围内的PL峰能量的温度依赖性比InGaAsP的带隙的温度依赖性小得多。（© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
GaNyAs1–x–yBix alloys were grown by molecular beam epitaxy (MBE). Successful incorporation of N and Bi atoms was confirmed and their concentration was evaluated by Rutherford backscattering spectroscopy (RBS) and secondary ion mass spectroscopy (SIMS). Single‐peak photoluminescence (PL) spectra were observed in the temperature range of 10–300 K. The PL peak energy of GaNyAs1–x–yBix alloy decreased with increasing GaBi and GaN molar fractions with redshift coefficients of ∼62 meV/%Bi and ∼130 meV/%N, respectively, at room temperature. The temperature dependence of the PL peak energy in the temperature range of 150–300 K is much smaller than the temperature dependence of the bandgap for InGaAsP. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)