A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules
A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules
复制标题
用于提高高功率 SiC MOSFET 模块开关性能的新型有源栅极驱动器
DOI：
10.1109/tpel.2018.2878779
复制
发表时间：
2019-08-01
影响因子：
6.7
通讯作者：
Gao, Yong
中科院分区：
文献类型：
--
作者：
Yang, Yuan;Wen, Yang;Gao, Yong
碳化硅陶瓷（SiC mosquito）具有开关速度快、损耗低等特点，作为一种新型的功率器件，在高功率密度、高效率电力电子领域得到了广泛的应用。然而，开关速度的增加会引起振荡、过冲、电磁干扰（EMI），甚至额外的损耗。为了充分发挥SiC MOSFET在不同工作温度和负载电流下的高速特性，提出了一种新型的大功率SiC MOSFET有源栅极驱动器（AGD）。AGD的原理基于电压和电流斜率期间的驱动电压递减，因为高dV/dt和dI/dt是过冲、振荡和EMI问题的根源。此外，考虑到开关损耗和开关应力之间的折衷，最佳驱动电压开关延迟时间已被分析和计算。与传统的固定驱动电压的栅极驱动器相比，所提出的AGD具有抑制过冲、振荡和降低损耗的能力，而不损害EMI。最后，在1.2 kV/300 A和1.7 kV/300 A SiC MOSFET上进行了不同工作温度和负载电流下的双脉冲实验，验证了AGD的开关特性。此外，电磁干扰的讨论和成本分析实现了AGD。
Featuring higher switching speed and lower losses, the silicon carbide mosfets (SiC mosfets) are widely used in higher power density and higher efficiency power electronic applications as a new solution. However, the increase of the switching speed induces oscillations, overshoots, electromagnetic interference (EMI), and even additional losses. In this paper, a novel active gate driver (AGD) for high-power SiC mosfets is presented to fully utilize its potential of high-speed characteristic under different operation temperatures and load currents. The principle of the AGD is based on drive voltage decrement during the voltage and current slopes since high dV/dt and dI/dt are the source of the overshoots, oscillations, and EMI problems. In addition, the optimal drive voltage switching delay time has been analyzed and calculated considering a tradeoff between switching losses and switching stresses. Compared to conventional gate driver with fixed drive voltage, the proposed AGD has the capability of suppressing the overshoots, oscillations, and reducing losses without compromising the EMI. Finally, the switching performance of the AGD was experimentally verified on 1.2 kV/300 A and 1.7 kV/300 A SiC mosfets in double pulse test under different operation temperatures and load currents. In addition, an EMI discussion and cost analysis were realized for AGD.