Dopant‐free complementary metal oxide silicon field effect transistors
Dopant‐free complementary metal oxide silicon field effect transistors
复制标题
无掺杂互补金属氧化物硅场效应晶体管
DOI：
10.1002/pssa.201532998
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
J. Knoch
中科院分区：
文献类型：
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作者：
S. Fischer;H. Kremer;B. Berghoff;T. Maß;T. Taubner;J. Knoch
我们提出了一种无掺杂的CMOS技术，其中n型和p型半导体接触仅基于具有适当功函数的氮化硅和金属来实现。椭偏仪和FTIR测量应用于表征热生长的氮化物层。实现了单极行为和欧姆接触行为，表明通过适当的氮化物厚度，可以抑制悬挂键以及金属诱导的间隙态，从而产生费米能级的脱钉。首次成功展示了使用低功函数和高功函数金属（如铝、镍或铂）的n型和p型MOSFET。与（金属硅）肖特基势垒MOSFET相比，制造的器件的开/关比大于。
Abstractauthoren We present a dopant‐free CMOS technology where n‐ and p‐type semiconductor contacts are realized exclusively based on ultrathin silicon nitrides and metals with appropriate work function. Ellipsometry and FTIR measurements are applied to characterize the thermally grown nitride layers. Unipolar behavior and ohmic contact behavior are accomplished showing that with an appropriate nitride thickness dangling bonds as well as metal‐induced gap states can be suppressed, thus yielding a depinning of the Fermi level. n‐type and –for the first time – p‐type MOSFETs using low‐ and high‐work‐function metals such as aluminum, nickel, or platinum are successfully presented. In contrast to (metal–silicon) Schottky‐barrier MOSFETs, the fabricated devices exhibit on/off ratios larger than .