Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments
Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments
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适用于极端环境的高效升压电源处理单元中的碳化硅功率 MOSFET 性能
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
Yuan Chen
中科院分区：
文献类型：
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作者：
Stanley A. Ikpe;J. Lauenstein;G. Carr;D. Hunter;L. Ludwig;William A. Wood;L. Castillo;Fred D. Fitzpatrick;Yuan Chen
摘要近年来，碳化硅（SiC）器件技术引起了人们极大的兴趣。SiC具有优于硅（Si）的上级热性能、额定功率和潜在开关频率，为极端环境下的高功率开关应用提供了更大的可能性。特别地，SiC金属氧化物半导体场效应晶体管（MOSFET）的成熟工艺技术已经产生了大量能够在高频下切换的市售功率密集、低导通状态电阻器件。利用SiC功率器件实现了一种新型的硬开关功率处理单元（PPU）。结合栅氧化层和漏源结寿命的损伤累积模型来捕获和评估加速寿命数据，以评估高温环境下的潜在系统性能。
Abstract Silicon-Carbide (SiC) device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon (Si) counterpart, SiC offers a greater possibility for high powered switching applications in extreme environment. In particular, SiC Metal-Oxide-Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing SiC power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.