Fluorine incorporation in solution-processed poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors
Fluorine incorporation in solution-processed poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors
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DOI：
10.1088/1361-6463/aaaf51
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发表时间：
2018-03
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通讯作者：
Naofumi Yoshida;J. Bermundo;Y. Ishikawa;T. Nonaka;Katsuto Taniguchi;Y. Uraoka
中科院分区：
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作者：
Naofumi Yoshida;J. Bermundo;Y. Ishikawa;T. Nonaka;Katsuto Taniguchi;Y. Uraoka
研究了用溶液法制备的含氟聚硅氧烷（Poly-SX）非晶InGaZnO （a- igzo）薄膜晶体管（TFT）钝化层。该钝化层大大提高了a-IGZO器件在正偏置应力（PBS）和负偏置应力（NBS）作用下的稳定性。与未含氟的Poly-SX钝化的tft （8.04 cm2 V−1 s−1）相比，含氟的Poly-SX钝化的tft的迁移率（µ）提高了31% ~ 56% （10.50 ~ 12.54 cm2 V−1 s−1）。氟添加量的增加导致钝化tft的µin增加。除了提高性能外，这些钝化层还可以提高a- igzo TFTs在PBS和NBS下的可靠性，最小阈值电压位移（ΔVth）分别高达+0.2 V和- 0.1 V。此外，所有经氟化钝化材料钝化的tft在NBS后都没有表现出驼峰效应。我们还发现氟化光敏Poly-SX具有有效的钝化性能，无需任何干蚀刻工艺即可制备。在本报告中，我们展示了Poly-SX的光刻，以及Poly-SX钝化tft的电学性能，并分析了a-IGZO层的状态，以显示Poly-SX作为一种有效的溶液钝化材料的巨大潜力。
We investigated a fluorine-containing polysiloxane (Poly-SX) passivation layer fabricated by solution process for amorphous InGaZnO (a-IGZO) thin-film transistors (TFT). This passivation layer greatly improved the stability of the a-IGZO device even after being subjected to positive bias stress (PBS) and negative bias stress (NBS). The mobility (µ) of TFTs passivated by fluorine-containing Poly-SX increased by 31%–56% (10.50–12.54 cm2 V−1 s−1) compared with TFTs passivated by non-fluorinated Poly-SX (8.04 cm2 V−1 s−1). Increasing the amount of fluorine additives led to a higher µ in passivated TFTs. Aside from enhancing the performance, these passivation layers could increase the reliability of a-IGZO TFTs under PBS and NBS with a minimal threshold voltage shift (ΔVth) of up to +0.2 V and −0.1 V, respectively. Additionally, all TFTs passivated by the fluorinated passivation materials did not exhibit a hump effect after NBS. We also showed that fluorinated photosensitive Poly-SX, which can be fabricated without any dry etching process, had an effective passivation property. In this report, we demonstrated the photolithography of Poly-SX, and electrical properties of Poly-SX passivated TFTs, and analyzed the state of the a-IGZO layer to show the large potential of Poly-SX as an effective solution-processed passivation material.