Dislocation climb in two-dimensional discrete dislocation dynamics
Dislocation climb in two-dimensional discrete dislocation dynamics
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DOI：
10.1063/1.4718432
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发表时间：
2012-05-15
影响因子：
3.2
通讯作者：
Vlassak, Joost J.
中科院分区：
文献类型：
--
作者：
Davoudi, Kamyar M.;Nicola, Lucia;Vlassak, Joost J.
在本文中，位错爬被纳入二维离散位错动力学模型中。针对在一个或两个表面上钝化的多晶薄膜进行计算。爬升可以使位错从位错堆积中逸出，并降低应变硬化率，特别是对于完全钝化的薄膜。在此模型的框架内，爬移修改了塑性变形过程中形成的位错结构，并导致在不包含任何位错源的滑移面上形成堆积。 (C) 2012 年美国物理研究所。 [http://dx.doi.org/10.1063/1.4718432]
In this paper, dislocation climb is incorporated in a two-dimensional discrete dislocation dynamics model. Calculations are carried out for polycrystalline thin films, passivated on one or both surfaces. Climb allows dislocations to escape from dislocation pile-ups and reduces the strain-hardening rate, especially for fully passivated films. Within the framework of this model, climb modifies the dislocation structures that develop during plastic deformation and results in the formation of pile-ups on slip planes that do not contain any dislocation sources. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718432]