Metal bonding during sputter film deposition
Metal bonding during sputter film deposition
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溅射薄膜沉积期间的金属接合
DOI：
10.1116/1.581319
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
J. Lodder
中科院分区：
文献类型：
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作者：
T. Shimatsu;R. Mollema;D. Monsma;E. Keim;J. Lodder
我们研究了两个带有金属薄膜的平面硅衬底之间的键合。在金属膜的无污染表面上的薄膜溅射沉积期间完成键合。在这项工作中，我们使用了Ti和Pt。这些金属膜（每个具有10-20 nm的厚度）的成功结合在室温下在整个结合区域（12 mm × 12 mm）上发生。自扩散，特别是在晶界和薄膜表面，是键合的机制。只有当膜表面粗糙度足够小于金属的自扩散长度时，才发生合适的金属结合。特别是在Ti与Ti膜的结合中，透射电子显微镜观察显示，完整的晶粒已经形成在单个薄Ti膜之间的前界面上。这种无界面连接可以用Ti的高自扩散系数引起的Ti晶格的再结晶来解释。该技术将应用于晶片的键合以制造薄膜器件或微系统。此外，这种键合技术可以用于许多不同的薄膜材料和各种半导体衬底。
We studied the bonding between two flat Si substrates with thin metal films. The bonding was accomplished during thin film sputter deposition on contamination free surfaces of metal films. In this work we used Ti and Pt. Successful bonding of these metal films (each having a thickness of 10–20 nm) occurred at room temperature over the entire bonded area (12 mm × 12 mm). Self-diffusion, particularly at grain boundaries and film surface, was the mechanism for bonding. Suitable metal bonding only occurred if the film surface roughness is sufficiently smaller than the self-diffusion length of metals. Particularly in the bonding of Ti to Ti films, transmission electron microscope observation revealed that complete crystalline grains had been formed across the former interface between the single thin Ti films. The interfaceless bonding can be explained by recrystallization of the Ti lattice due to the high self-diffusion coefficient of Ti. This technique would be applied to bonding of wafers to fabricate thin film devices or microsystems. Moreover, this bonding technology can be used with many different thin film materials and various semiconductor substrates.