Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth
Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth
复制标题
直流偏压电子回旋共振等离子体溅射高质量硅外延生长的最佳放电条件
DOI：
10.1143/jjap.39.2834
复制
发表时间：
2000
影响因子：
1.5
通讯作者：
K. Muraoka
中科院分区：
文献类型：
--
作者：
Junsi Gao;H. Nakashima;Junli Wang;Kanako Iwanaga;H. Nakashima;K. Ikeda;K. Furukawa;K. Muraoka
采用电子回旋共振（ECR）等离子体溅射技术，结合直流衬底偏压，在衬底温度400°C和基底气压5×10-7 Torr的条件下制备了存款单晶薄膜。在沉积气压为2.2 mTorr、衬底偏压为+10 V、ECR功率和射频溅射功率均为500 W的最佳放电条件下，可以获得晶体学上完美的单晶沉积。这些结果已被解释为提供了足够的离子通量吸附原子，同时保持足够低的离子能量，以避免在沉积过程中的基板和薄膜损坏。
An electron cyclotron resonance (ECR) plasma sputtering method, combined with DC substrate bias, has been developed to deposit single crystal thin films at the low substrate temperature of 400°C and a conventional base pressure of 5×10-7 Torr. At the optimum discharge condition of deposition pressure of 2.2 mTorr and substrate bias of +10 V, with both the ECR power and the rf power for sputtering of 500 W, crystallographically perfect single crystal deposition was found to be possible. These results have been interpreted as supplying a sufficient ion flux to adatoms while maintaining a sufficiently low ion energy to avoid substrate and film damage during deposition.