Efficient thermal modeling of SOI MOSFETs for fast dynamic operation
Efficient thermal modeling of SOI MOSFETs for fast dynamic operation
复制标题
DOI：
10.1109/ted.2004.835994
复制
发表时间：
2004-09
影响因子：
3.1
通讯作者：
Jun Lin;Min Shen;M. Cheng;M. Glasser
中科院分区：
文献类型：
--
作者：
Jun Lin;Min Shen;M. Cheng;M. Glasser
建立了一种有效的绝缘体上硅(SOI)MOSFET的动态热模型。该模型是基于热泛函的变分原理建立的，能够描述SOI器件在发电突变情况下极快的动态热行为。将所建立的模型进一步转化为热阻和热容随时间变化的热路。通过在电路模拟器中实现该电路，这些时变的热阻和电容能够在不包括大量节点的情况下合理地捕捉SOI器件中极快的温度演变。通过包括自热在内的严格器件模拟，验证了所建立的动态热模型和电路的正确性。
An efficient dynamic thermal model has been developed for silicon-on-insulator (SOI) MOSFETs. The model is derived from the variational principle using a thermal functional, and is able to describe extremely fast dynamic thermal behavior in SOI devices subjected to sudden changes in power generation. The developed model is further converted into a thermal circuit with time-varying thermal resistances and capacitances. With the circuit implemented in a circuit simulator, these time-varying thermal resistances and capacitances are able to reasonably capture extremely fast temperature evolution in SOI devices without including a large number of nodes. The developed dynamic thermal model and circuit are verified with the rigorous device simulation including self-heating.