61 GHz millimeter wave voltage variable attenuator based on flip-chip mounted PIN-diodes
61 GHz millimeter wave voltage variable attenuator based on flip-chip mounted PIN-diodes
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基于倒装芯片安装 PIN 二极管的 61 GHz 毫米波电压可变衰减器
DOI：
10.1109/mikon.2014.6899966
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
A. Koelpin
中科院分区：
文献类型：
--
作者：
S. Mann;F. Lurz;S. Lindner;F. Barbon;S. Linz;R. Weigel;A. Koelpin
可变电压衰减器在射频系统设计中起着重要的作用。本文介绍了一种适用于61 GHz ISM频段的可变电压衰减器概念，并对其进行了讨论。提出的反射式电压可变衰减器在61 GHz ISM频段内的最大衰减量为32d B，中低衰减值的低相移小于10°。此外，提出了一种偏置网络，该网络具有低反射损耗和对制造公差的稳健性。为了验证的目的，制作了电压可变衰减器和参考传输线，并进行了测试。
Voltage Variable Attenuators play a major role in radio frequency system design. In this paper, a voltage variable attenuator concept suitable for the 61GHz ISM band is introduced and discussed. The proposed reflection type voltage variable attenuator has a maximum attenuation of 32 dB in the 61 GHz ISM-band range, and a low phase-shift of less than 10° for low and medium attenuation values. Furthermore, a bias network is presented featuring low reflection loss, and robustness against manufacturing tolerances. For verification purposes, a voltage variable attenuator as well as a reference transmission line have been fabricated and measured.