Spin lifetime measurements in GaAsBi thin films
Spin lifetime measurements in GaAsBi thin films
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DOI：
10.1063/1.4781415
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发表时间：
2012-11
影响因子：
4
通讯作者：
B. Pursley;M. Luengo-Kovac;G. Vardar;R. Goldman;V. Sih
中科院分区：
文献类型：
--
作者：
B. Pursley;M. Luengo-Kovac;G. Vardar;R. Goldman;V. Sih
用光致发光光谱和Hanle效应测量研究了半导体合金GaAsBi中载流子自旋退相和复合时间随温度和激发能的变化。Hanle效应测量表明，g因子与有效自旋退相时间(GTS)的乘积在40K时为0.8 ns，120K时为0.1 ns。GTS的温度依赖关系为热激活效应提供了证据，该效应归因于40 K以下单个Bi或Bi团簇位置上的空穴局域化。
Photoluminescence spectroscopy and Hanle effect measurements are used to investigate carrier spin dephasing and recombination times in the semiconductor alloy GaAsBi as a function of temperature and excitation energy. Hanle effect measurements reveal the product of g-factor and effective spin dephasing time (gTs) ranges from 0.8 ns at 40 K to 0.1 ns at 120 K. The temperature dependence of gTs provides evidence for a thermally activated effect, which is attributed to hole localization at single Bi or Bi cluster sites below 40 K.