Magnetostriction Of Tb-fe(B) Thin Films Fabricated By RF Magnetron Sputtering
Magnetostriction Of Tb-fe(B) Thin Films Fabricated By RF Magnetron Sputtering
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DOI：
10.1109/20.619622
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发表时间：
1997-04
期刊：
影响因子：
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通讯作者：
S. Lim;Y. Choi;S.H. Han;S.R. Lee;H. Kim;T. Shima;H. Fujimori
中科院分区：
文献类型：
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作者：
S. Lim;Y. Choi;S.H. Han;S.R. Lee;H. Kim;T. Shima;H. Fujimori
系统地研究了TbFe和TbFeB薄膜在40.2 ~ 68.1at.%范围内的磁致伸缩特性Tb的无B合金和44.1至66.8原子% Tb的含B的薄膜。薄膜采用射频磁控溅射法制备。在低Tb含量下，微结构主要由非晶相组成，在高Tb含量下，微结构主要由非晶相和/spl α/ Tb相的混合物组成。TbFe和TbFeB薄膜均具有优异的磁致伸缩特性，特别是在低磁场下;例如，在低至30 Oe的磁场下，在TbFeB薄膜中获得138 ppm的磁致伸缩。本发明薄膜的这些优异的磁致伸缩性能由优异的磁软度支持，磁饱和度低于10 Oe，具有典型的方环形状，饱和场低至1 kOe。TbFe基磁致伸缩薄膜具有优良的低场磁致伸缩特性，适合于Si基微器件的制备。
The magnetostriction of TbFe and TbFeB thin films is systematically investigated over a wide composition range from 40.2 to 68.1 at.% Tb for the B-free alloys and from 44.1 to 66.8 at.% Tb for the B containing thin films. The films were fabricated by rf magnetron sputtering. The microstructure mainly consists of an amorphous phase at low Tb contents and, at high Tb contents, a mixture of an amorphous phase and an /spl alpha/ Tb phase. Excellent magnetostrictive characteristics, particularly at low magnetic fields, are achieved in both TbFe and TbFeB thin films; for example, a magnetostriction of 138 ppm is obtained in a TbFeB thin film at a magnetic field as low as 30 Oe. These excellent magnetostrictive properties of the present thin films are supported by the excellent magnetic softness, the coercivity below 10 Oe and a typical squared-loop shape with the saturation field as low as 1 kOe. It is considered that, due to the excellent low field magnetostrictive characteristics, the present TbFe based magnetostrictive thin films are suitable for Si based microdevices.