Effect of thermal convection on liquid phase epitaxy of GaN by Na flux methodn
Effect of thermal convection on liquid phase epitaxy of GaN by Na flux methodn
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DOI：
10.1143/jjap.46.7689
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发表时间：
2007-12-01
期刊：
影响因子：
--
通讯作者：
Sasaki, Takatomo
中科院分区：
文献类型：
--
作者：
Gejo, Ryohei;Kawamura, Furnio;Sasaki, Takatomo
在使用Na助熔剂法的GaN单晶的液相外延（LPE）生长中，我们通过在Ga-Na熔体中产生热对流来实现生长速率的增加和生长厚度分布的改变。热对流对生长速率和生长厚度分布的影响随对流强度的增加而增强，表明热对流可以使氮气在熔体中的溶解速率加快，同时也可以使氮气浓度均匀化。
In the liquid phase epitaxy (LPE) growth of GaN single crystals using the Na flux method, we achieved an increase in the growth rate and a change in the growth thickness distribution by generating thermal convection in the Ga-Na melt. The effect of thermal convection on the growth rate and growth thickness distribution became stronger with the strength of the convection, which indicates that thermal convection can produce a high dissolution rate of nitrogen gas into the melt as well as homogenize the nitrogen concentration.