Single-step chemical vapour deposition of anti-pyramid MoS2/WS2 vertical heterostructures
Single-step chemical vapour deposition of anti-pyramid MoS2/WS2 vertical heterostructures
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DOI：
10.1039/d0nr08281c
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发表时间：
2021-02-28
期刊：
影响因子：
6.7
通讯作者：
Sun, Zhipei
中科院分区：
文献类型：
--
作者：
Bai, Xueyin;Li, Shisheng;Sun, Zhipei
货车范德华异质结构是电子和光电子器件的基本构件。在这里，我们报告说，通过一个单一的步骤化学气相沉积（CVD）过程中，高品质的垂直双层二硫化钼/WS 2异质结构的晶粒尺寸可达60 μ m的相似，可以合成从熔盐前体，Na 2 MoO 4和Na 2 WO 4。用这种方法合成了一种反金字塔的MoS 2/WS 2结构，而不是用CVD方法生长的金字塔垂直异质结构，并用拉曼、光致发光和二次谐波显微镜对其进行了表征。我们的简单化学气相沉积合成反金字塔结构的策略为二维异质结构产品及其器件的应用提供了一条新的合成路线。
Van der Waals heterostructures are the fundamental building blocks of electronic and optoelectronic devices. Here we report that, through a single-step chemical vapour deposition (CVD) process, high-quality vertical bilayer MoS2/WS2 heterostructures with a grain size up to similar to 60 mu m can be synthesized from molten salt precursors, Na2MoO4 and Na2WO4. Instead of normal pyramid vertical heterostructures grown by CVD, this method synthesizes an anti-pyramid MoS2/WS2 structure, which is characterized by Raman, photoluminescence and second harmonic generation microscopy. Our facile CVD strategy for synthesizing anti-pyramid structures unveils a new synthesis route for the products of two-dimensional heterostructures and their devices for application.