Spin injection with three terminal device based on (Ga,Mn)As/n+-GaAs tunnel junction
Spin injection with three terminal device based on (Ga,Mn)As/n+-GaAs tunnel junction
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DOI：
10.1002/pssc.200672865
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发表时间：
2006-12
期刊：
影响因子：
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通讯作者：
T. Kita;M. Kohda;Y. Ohno;F. Matsukura;H. Ohno
中科院分区：
文献类型：
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作者：
T. Kita;M. Kohda;Y. Ohno;F. Matsukura;H. Ohno
我们制作了一个三端器件，集成了（Ga，Mn）As江崎二极管和发光二极管（LED），研究自旋极化电子注入的偏压依赖性。在法拉第配置下测量来自LED的电致发光偏振（PEL）作为独立地施加到江崎二极管和LED的偏置电压的函数。当LED偏压固定时，偏振显示出对施加到江崎二极管的偏压的强烈依赖性。当（Ga，Mn）As的费米能级附近的价电子被注入到LED中时，观察到最大的PEL为32.4%。（© 2006 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have fabricated a three terminal device integrating a (Ga,Mn)As Esaki diode and a light emitting diode (LED) to investigate the bias-voltage dependence of the injection of spin polarized electrons. The electroluminescence polarization (PEL) from the LED was measured under Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The polarization shows strong dependence on the bias applied to the Esaki diode when the LED bias is fixed. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are injected into the LED. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)