A Broadband 200 GHz Amplifier with 17 dB Gain and 18 mW DC-Power Consumption in 0.13 $mu$m SiGe BiCMOS
A Broadband 200 GHz Amplifier with 17 dB Gain and 18 mW DC-Power Consumption in 0.13 $mu$m SiGe BiCMOS
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采用 0.13 $mu$m SiGe BiCMOS 封装、具有 17 dB 增益和 18 mW DC 功耗的宽带 200 GHz 放大器
DOI：
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发表时间：
2014
影响因子：
3
通讯作者：
F. Ellinger
中科院分区：
文献类型：
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作者：
D. Fritsche;C. Carta;F. Ellinger
这封信提出了一个200 GHz的低功耗高数据速率无线通信放大器。随着大带宽和能量效率作为并行目标，已经采用了用于高功率增益的共源共栅级和双频带匹配网络以最大化带宽。该放大器采用450 GHz SiGe BiCMOS工艺实现，电路面积仅为800 μm × 300 μm。该电路的最大功率增益为16.9 dB，带宽为44 GHz，在1 dB压缩下输出功率为-3.5 dBm，而所需直流功率仅为18 mW。
This letter presents a 200 GHz amplifier for low-power high data-rate wireless communications. With large bandwidth and energy efficiency as concurrent goals, cascode stages for high power gain and dual-band matching networks to maximize the bandwidth have been employed. The resulting amplifier has been implemented in a 450 GHz SiGe BiCMOS technology, requiring a circuit area of only 800 μm × 300 μm. The characterized circuit exhibits 16.9 dB of maximum power gain, 44 GHz of bandwidth and -3.5 dBm of output power at 1 dB compression, while requiring only 18 mW of DC-power.