A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation
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DOI:
10.1002/adma.201203680
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发表时间:
2013-03-25
期刊:
影响因子:
29.4
通讯作者:
Wong, H. -S. Philip
Wong, H. -S. Philip
中科院分区:
材料科学1区
文献类型:
--
作者:
Yu, Shimeng;Gao, Bin;Wong, H. -S. Philip

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神经形态计算是一种新兴的计算范式,超越了传统的数字冯诺依曼计算。一种基于氧化物的阻变存储器被设计为模拟突触器件。在器件级,渐进电阻调制的特征在于数百个相同的脉冲,实现了每个尖峰小于1 pJ的低能耗。此外,一个随机紧凑的模型来量化器件的开关动态和变化。在系统级,人工视觉系统的性能与16 348氧化物为基础的突触设备的图像方向或边缘检测进行了模拟,成功地展示了神经形态计算的一个关键特征:容忍设备的变化。[图形]。
Neuromorphic computing is an emerging computing paradigm beyond the conventional digital von Neumann computation. An oxide-based resistive switching memory is engineered to emulate synaptic devices. At the device level, the gradual resistance modulation is characterized by hundreds of identical pulses, achieving a low energy consumption of less than 1 pJ per spike. Furthermore, a stochastic compact model is developed to quantify the device switching dynamics and variation. At system level, the performance of an artificial visual system on the image orientation or edge detection with 16 348 oxide-based synaptic devices is simulated, successfully demonstrating a key feature of neuromorphic computing: tolerance to device variation.[GRAPHICS].