Fabrication of 10-nm-scale nanoconstrictions in graphene using atomic force microscopy-based local anodic oxidation lithography
Fabrication of 10-nm-scale nanoconstrictions in graphene using atomic force microscopy-based local anodic oxidation lithography
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DOI：
10.7567/jjap.54.04dj06
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发表时间：
2015-04-01
影响因子：
1.5
通讯作者：
Machida, Tomoki
中科院分区：
文献类型：
--
作者：
Arai, Miho;Masubuchi, Satoru;Machida, Tomoki
我们利用原子力显微镜（AFM）对单层石墨烯和高取向热解石墨（HOPG）进行了局部阳极氧化（LAO）光刻。俄歇电子能谱测量在HOPG上形成的氧化区域显示，氧原子的数量系统地增加与施加到AFM悬臂垂直杆V-尖垂直杆的偏压，这表明与垂直杆V-尖垂直杆的氧化程度的可调性。通过优化LAO条件，我们制作了单层石墨烯纳米收缩的通道宽度小至10 nm，这是迄今为止通过利用AFM光刻技术实现的最小的石墨烯纳米收缩。(C)2015日本应用物理学会
We performed local anodic oxidation (LAO) lithography on monolayer graphene and highly oriented pyrolytic graphite (HOPG) using atomic force microscope (AFM). Auger electron spectroscopic measurements in the oxidized area formed on the HOPG revealed that the number of oxygen atoms systematically increased with the bias voltage applied to the AFM cantilever vertical bar V-tip vertical bar, which demonstrates the tunability of the extent of oxidation with vertical bar V-tip vertical bar. By optimizing the LAO conditions, we fabricated monolayer graphene nanoconstrictions with a channel width as small as 10 nm, which is the smallest graphene nanoconstriction so far achieved by utilizing AFM lithography techniques. (C) 2015 The Japan Society of Applied Physics