Interaction of an argon plasma jet with a silicon wafer
Interaction of an argon plasma jet with a silicon wafer
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DOI：
10.1088/0022-3727/49/14/145201
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发表时间：
2016-04-13
影响因子：
3.4
通讯作者：
Awakowicz, Peter
中科院分区：
文献类型：
--
作者：
Engelhardt, Max;Pothiraja, Ramasamy;Awakowicz, Peter
在大气压条件下，在氩等离子体射流中点燃丝状放电。气体放电通过电压-电流测量、光学发射光谱和时间分辨率低至 10 ns 的 ICCD 相机进行表征。在等离子射流的流出物中，细丝与硅片表面接触并对其进行改性，即产生蚀刻痕迹并沉积微晶。使用光学和电子显微镜研究这些痕迹。用拉曼显微光谱分析沉积微晶的材料和硅片的表面修饰。在蚀刻痕迹内发现非晶硅。沉积的微晶的最大部分由硝碱（NaNO3）组成，其中一些是方解石（CaCO3）。通过分析硅晶片变形的可能原因，我们得出的结论是，通过与电离波相互作用在基板表面附近产生的等离子体团是对观察到的硅晶片表面变形的合理解释。
A filamentary discharge is ignited in an argon plasma jet under atmospheric pressure conditions. The gas discharge is characterized with voltage-current measurements, optical emission spectroscopy and an ICCD-camera with a high temporal resolution down to 10 ns. In the effluent of the plasma jet, filaments come into contact with the surface of a silicon wafer and modify it, namely etching traces are produced and microcrystals are deposited. These traces are studied with optical and electron microscopes. The material of the deposited microcrystals and the surface modifications of the silicon wafer are analyzed with Raman microspectroscopy. Amorphous silicon is found within the etching traces. The largest part of the deposited microcrystals are composed of nitratine (NaNO3) and some of them are calcite (CaCO3). Analyzing the possible reasons for the silicon wafer modifications we come to the conclusion that plasmoids, which are produced near the substrate surface by interaction with ionization waves, are a plausible explanation for the observed surface modifications of the silicon wafer.