Electron emission from depletion layers of silicon p‐n junctions
Electron emission from depletion layers of silicon p‐n junctions
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DOI：
10.1063/1.328114
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发表时间：
1980-07
影响因子：
3.2
通讯作者：
G. V. Gorkom;A. Hoeberechts
中科院分区：
文献类型：
--
作者：
G. V. Gorkom;A. Hoeberechts
描述了真空中由非常浅的硅p-n结发射的电子的能量分布的测量。已经发现，具有垂直于表面的结的二极管显示出相对窄的峰和宽带，而具有平行于表面的结的二极管仅给出窄峰（半宽0.50 eV）。宽的带归因于从结的耗尽层发射的电子，并且窄的峰归因于从中性n层发射的电子。
Measurements of the energy distribution of electrons emitted in vacuum by very shallow silicon p‐n junctions are described. It has been found that diodes with the junction perpendicular to the surface show a relatively narrow peak and a broad band, while diodes with the junction parallel to the surface only give a narrow peak (half‐width 0.50 eV). The broad band is ascribed to electrons emitted from the depletion layer of the junction, and the narrow peak is attributed to electrons emitted from the neutral n layer.