Ferroelectric Field Effect Transistors for Memory Applications
Ferroelectric Field Effect Transistors for Memory Applications
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DOI：
10.1002/adma.200904327
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发表时间：
2010-07-20
影响因子：
29.4
通讯作者：
Ma, T. P.
中科院分区：
文献类型：
--
作者：
Hoffman, Jason;Pan, Xiao;Ma, T. P.
铁电体的非易失性极化是数字存储应用的一个有前景的候选方案。铁电电容器已成功与硅电子器件集成，其中极化状态通过基于场效应晶体管结构的器件读出。将铁电极化直接耦合到场效应晶体管的沟道是一个长期的研究课题，由于铁电体的特性以及铁电体和导电沟道之间界面的性质，这一课题一直难以实现。在此，我们报道了两种有前景的无电容器存储架构的制备和特性。
The non-volatile polarization of a ferroelectric is a promising candidate for digital memory applications. Ferroelectric capacitors have been successfully integrated with silicon electronics, where the polarization state is read out by a device based on a field effect transistor configuration. Coupling the ferroelectric polarization directly to the channel of a field effect transistor is a long-standing research topic that has been difficult to realize due to the properties of the ferroelectric and the nature of the interface between the ferroelectric and the conducting channel. Here, we report on the fabrication and characterization of two promising capacitor-less memory architectures.