Quenching of Excitons by Holes in Poly(3-hexylthiophene) Films
Quenching of Excitons by Holes in Poly(3-hexylthiophene) Films
复制标题
聚（3-己基噻吩）薄膜中空穴对激子的猝灭
DOI：
10.1021/jp7113412
复制
发表时间：
2008
影响因子：
3.7
通讯作者：
G. Rumbles
中科院分区：
文献类型：
--
作者：
A. Ferguson;N. Kopidakis;S. Shaheen;G. Rumbles
用闪光光解时间分辨微波电导法研究了纯的区域规整的聚（3-己基噻吩）和与1wt%的电子受体[6，6]-苯基-C_（61）-丁酸甲酯（PCBM）共混的聚合物薄膜中激子的产生及其与空穴的相互作用.在纯聚合物和供体-受体共混物中，光生空穴密度和入射光强度之间的亚线性关系可以归因于空穴对激子的猝灭，其速率特征在于二级速率常数（γ2）为3 × 10−8 cm 3/s。该值大于其他发光共轭聚合物的值;该差异可能归因于更大的碰撞概率，由于相互作用物质的更高流动性，或者一旦它们非常接近，猝灭速率就会增强。这种现象对基于简单聚合物的有机光伏太阳能电池的最终效率产生了影响：PCBM块体聚合物。
The generation of excitons and their interaction with holes in films of neat regioregular poly(3-hexylthiophene) and the polymer blended with 1 wt% of the electron-acceptor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) have been studied using flash-photolysis time-resolved microwave conductivity. The sublinear relationship between the photogenerated hole density and the incident light intensity, in both the neat polymer and the donor−acceptor blend, can be attributed to the quenching of excitons by holes, at a rate characterized by a second-order rate constant (γ2) of 3 × 10−8 cm3/s. This value is larger than that found for other, luminescent conjugated polymers; the difference may be attributed to a greater collision probability, due to the higher mobility of the interacting species, or to an enhancement of the quenching rate once they are in close proximity. The phenomenon has consequences for the ultimate efficiency of organic photovoltaic solar cells that are based on the simple polymer:PCBM bulk ...