EPITAXIAL LIFT-OFF GAAS HEMTS
EPITAXIAL LIFT-OFF GAAS HEMTS
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DOI：
10.1109/16.469391
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发表时间：
1995-11-01
影响因子：
3.1
通讯作者：
DEROSA, F
中科院分区：
文献类型：
--
作者：
SHAH, DM;CHAN, WK;DEROSA, F
对外延剥离（ELO）Al（0.3）Ga（0.7）As/GaAs调制掺杂异质结高电子迁移率场效应晶体管（HEMT）进行了深入研究，研究了ELO对Al GaAs/GaAs界面二维电子气输运性质的影响。具有1.5 μ m栅极长度的ELO HEMT具有最大非本征载流子g（m-max）= 125 mS/mm，单位电流增益截止频率f（t）= 10.5 GHz，以及最大振荡频率f（max）= 12 GHz。给出了ELO HEMT的最大本征载流子浓度的统计分布，并与片上器件进行了比较。通过室温下去偏置连续工作，对ELO HEMT的稳定性进行了评价。
An extensive study of epitaxial lift-off (ELO) Al(0.3)Gao(0.7)As/GaAs modulation doped heterostructure high electron mobility field-effect transistors (HEMT's) is presented, Effects of ELO on electron transport properties of two-dimensional electron gas at A1GaAs/GaAs interface are investigated. An ELO HEMT with 1.5 mu m gate length had a maximum extrinsic transconductance g(m-max) = 125 mS/mm, a unity current gain cut-off frequency f(t) = 10.5 GHz, and a maximum frequency of oscillation f(max) = 12 GHz. Statistical distributions of maximum intrinsic transconductance of ELO HEMT's are presented and compared with their on-wafer counterparts, Stability of the ELO HEMT's has also been evaluated by continuous operation at room temperature under de bias.