Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s
Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s
复制标题
聚（3-烷基噻吩）场效应掺杂诱导的红外吸收
DOI：
10.1016/s0379-6779(02)00624-0
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发表时间：
2003
期刊：
影响因子：
4.4
通讯作者：
S. Furukawa
中科院分区：
文献类型：
--
作者：
Y. Furukawa;H. Takao;J. Yamamoto;S. Furukawa
通过结合红外反射吸收光谱和傅里叶变换红外光谱法，获得了由立体规则性聚（3-己基噻吩）或聚（3-辛基噻吩）制成的金属-绝缘体-半导体二极管的场致红外吸收光谱。所获得的光谱归因于在负栅极电压范围内与绝缘体（氧化铝）层的界面处产生的正极化子。
Field-induced infrared absorption spectra from the metal-insulator-semiconductor diodes fabricated with regioregular poly (3-hexylthiophene) or poly (3-octylthiophene) have been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The obtained spectra have been attributed to positive polarons generated at the interface with the insulator (aluminum oxide) layer in the range of minus gate voltage.