Photoelectrochemical studies of passive films on zirconium and amorphous iron-zirconium alloys
Photoelectrochemical studies of passive films on zirconium and amorphous iron-zirconium alloys
复制标题
锆及非晶铁锆合金钝化膜的光电化学研究
DOI：
10.1021/la00078a006
复制
发表时间：
1987
期刊：
影响因子：
3.9
通讯作者：
U. Stimming
中科院分区：
文献类型：
--
作者：
A. Newmark;U. Stimming
The photoelectrochemical properties of passive films on zirconium of varying thicknesses and on amorphous iron-zirconium alloys of varyingcompositions have been investigated. Photocurrents were measured as a function of wavelength and potential. A tailing of the photocurrent is observed in photocurrent spectra down to photon energies well below the band-gap energy. From photocurrent spectra, band-gap energies of 4.8 and 3.3 eV for the passive films on Zr and Fe-Zr alloys, respectively, have been determined. The spectra together with the potential dependence of the photocurrent imply that localized states play an important role in the photoexcitation process of these films. Cathodic photocurrents at potentials above the flat-band potential are observed on the thinnest passive films formed on zirconium. Reverse tunneling is discussed as a possible explanation for this, which emphasizes the importance of localized states in thin passive films.
