A new degradation mechanism in high-voltage SiC power MOSFETs
A new degradation mechanism in high-voltage SiC power MOSFETs
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DOI：
10.1109/led.2007.897861
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发表时间：
2007-07-01
影响因子：
4.9
通讯作者：
Ryu, Sei-Hyung
中科院分区：
文献类型：
--
作者：
Agarwal, Anant;Fatima, Husna;Ryu, Sei-Hyung
先前已证明 SiC 高压 p-n 二极管中复合引起的堆垛层错现象会因少数载流子寿命缩短而增加正向压降。本文首次表明，这种效应在高压 MOSFET 等单极器件中同样重要。如果在这些器件工作期间允许内部体二极管正向偏置，那么复合引起的SF将减少多数载流子传导电流并增加阻断模式下的漏电流。这种影响在漂移层较厚的高压器件中更为明显，预计不会影响 600-1200V 器件。
The phenomenon of recombination-induced stacking faults in high-voltage p-n diodes in SiC has been previously shown to increase the forward voltage drop due to reduction of minority carrier lifetime. In this paper, it has been shown that, for the first time, this effect is equally important in unipolar devices such as high-voltage MOSFETs. If the internal body diode is allowed to be forward biased during the operation of these devices, then the recombination-induced SFs will reduce the majority carrier conduction current and increase the leakage current in blocking mode. The effect is more noticeable in high-voltage devices where the drift layer is thick and is not expected to impact 600-1200-V devices.