Investigation of dislocations in Nb-doped SrTiO3 by electron-beam-induced current and transmission electron microscopy
Investigation of dislocations in Nb-doped SrTiO3 by electron-beam-induced current and transmission electron microscopy
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DOI：
10.1063/1.4915298
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发表时间：
2015-03-09
影响因子：
4
通讯作者：
Ogura, Atsushi
中科院分区：
文献类型：
--
作者：
Chen, Jun;Sekiguchi, Takashi;Ogura, Atsushi
本文旨在阐明Nb掺杂SrTiO 3衬底中位错的电活动以及位错在Pt/SrTiO 3肖特基接触中电阻开关现象中的作用。用电子束感生电流（EBIC）技术研究了位错的电活动。EBIC已经发现，位错可以表现出暗或亮的对比度，这取决于它们的性质和能带弯曲条件。用化学腐蚀和透射电镜分析了位错的特征。这些数据表明，并不是所有的位错有助于开关现象。讨论了电阻开关中的活性位错。(C)2015 AIP Publishing LLC.
This paper aims to clarify the electrical activities of dislocations in Nb-doped SrTiO3 substrates and the role of dislocations in the resistance switching phenomenon in Pt/SrTiO3 Schottky contacts. The electrical activities of dislocations have been studied by electron-beam-induced current (EBIC) technique. EBIC has found that dislocations can exhibit dark or bright contrast depending on their character and band bending condition. The character of dislocations has been analysed based on chemical etching and transmission electron microscopy. These data suggested that not all the dislocations contribute to the switching phenomenon. The active dislocations for resistance switching were discussed. (C) 2015 AIP Publishing LLC.