Resistive silicon microstructure for embedding in aluminium during casting
Resistive silicon microstructure for embedding in aluminium during casting
复制标题
用于在铸造过程中嵌入铝中的电阻硅微观结构
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
W. Lang
中科院分区：
文献类型：
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作者：
G. Dumstorff;W. Lang
提出了一种镶嵌在铝中的电阻硅微结构。对于该电阻结构，使用了硅衬底上的掺硼多晶硅。采用厚膜工艺对结构进行钝化处理。在铸造过程中，一半的传感器集成在铝中。由于厚膜钝化，该传感器可以成功地集成在铝中。通过测量微结构随温度变化的电阻对传感器进行了表征。除嵌入式外，该传感器还可用于其他恶劣环境。
A resistive silicon microstructure embedded in aluminium is presented. For the resistive structure a boron-doped poly-silicon on a silicon substrate has been used. The passivation of the structure was done by thick film processing. Half of the sensor was integrated in aluminium in a casting process. Due to the thick film passivation the sensor could successfully be integrated in aluminium. Sensors had been characterized by measuring the temperature dependent resistance of the microstructure. Beside embedding the sensor can also be used for other harsh environments.