Low-threshold optically pumped lasing at 444 nm at room temperature with high characteristic temperature from Be-chalcogenide-based single-quantum-well laser structures
Low-threshold optically pumped lasing at 444 nm at room temperature with high characteristic temperature from Be-chalcogenide-based single-quantum-well laser structures
复制标题
基于铍硫族化物的单量子阱激光器结构在室温下以 444 nm 低阈值光泵浦激光，具有高特征温度
DOI：
10.1063/1.124546
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发表时间：
1999
影响因子：
4
通讯作者：
T. Goto
中科院分区：
文献类型：
--
作者：
J. Chang;M. Cho;K. Godo;H. Makino;T. Yao;M. Shen;T. Goto
我们在室温下实现了ZnSe/ZnMgBeSe单量子阱结构的444 nm高特征温度（T0）的低阈值光泵浦激光输出。阈值强度低至15 kW cm−2，而T0值高达166 K。 在473 K温度下观察到激光。在室温下的444 nm的激光波长是在ZnSe基激光二极管结构中实现的最短波长。激光器结构包括具有4 nm的ZnSe阱厚度的单个ZnMgBeSe/ZnSe/ZnMgBeSe量子阱。ZnMgBeSe四元包层的（004）X射线衍射摇摆曲线显示出半峰全宽为21弧秒的尖锐衍射峰，这与ZnMgSSe包层的衍射峰形成对比，ZnMgSSe包层显示出宽得多的多峰。所观察到的激光发射功能部分归因于高晶体质量的ZnMgBeSe层和I型带对齐，除了X射线衍射测量的光致发光已经支持。
We have achieved low-threshold optically pumped lasing at 444 nm at room temperature with high characteristic temperature (T0) from ZnSe/ZnMgBeSe single-quantum-well structures. The threshold intensity is as low as 15 kW cm−2, while T0 value is as high as 166 K. Lasing is observed up to 473 K. Lasing wavelength of 444 nm at room temperature is the shortest wavelength ever achieved in ZnSe-based laser diode structures. The laser structure includes a single ZnMgBeSe/ZnSe/ZnMgBeSe quantum well with a ZnSe well thickness of 4 nm. The (004) x-ray diffraction rocking curve of the ZnMgBeSe quaternary cladding layers shows a sharp diffraction peak with a full width at half maximum of 21 arcsec which is in contrast to that from a ZnMgSSe cladding layer showing much broader multiple peaks. The observed lasing features are partly ascribed to high crystal quality of the ZnMgBeSe layers and type-I band alignment, as has been supported by photoluminescence in addition to x-ray diffraction measurements.