Instant data sanitization on multi-level-cell NAND flash memory
Instant data sanitization on multi-level-cell NAND flash memory
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DOI：
10.1145/3534056.3534941
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发表时间：
2022-06
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影响因子：
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通讯作者：
M. Raquibuzzaman;Matchima Buddhanoy;A. Milenković;B. Ray
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文献类型：
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作者：
M. Raquibuzzaman;Matchima Buddhanoy;A. Milenković;B. Ray
从NAND闪存中立即删除数据会产生巨大的开销，并增加磨损水平。现有的解决方案涉及断开物理页面地址的链接，使数据无法通过标准接口访问，但它们存在数据泄漏的风险。已提出全零在位数据重写作为对策，但其仅适用于SLC快闪存储器。本文介绍了一种用于MLC闪存的即时页面数据清理方法，该方法在不影响共享页面中有效数据的情况下防止已删除信息的泄漏。我们实现和评估商业2D和3D NAND闪存芯片上所提出的方法。
Deleting data instantly from NAND flash memories incurs hefty overheads, and increases wear level. Existing solutions involve unlinking the physical page addresses making data inaccessible through standard interfaces, but they carry the risk of data leakage. An all-zero-in-place data overwrite has been proposed as a countermeasure, but it applies only to SLC flash memories. This paper introduces an instant page data sanitization method for MLC flash memories that prevents leakage of deleted information without any negative effects on valid data in shared pages. We implement and evaluate the proposed method on commercial 2D and 3D NAND flash memory chips.