Nb/AlN/Nb Josephson junctions with high critical current density
Nb/AlN/Nb Josephson junctions with high critical current density
复制标题
具有高临界电流密度的 Nb/AlN/Nb 约瑟夫森结
DOI：
10.1109/77.403049
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发表时间：
1995
影响因子：
1.8
通讯作者：
R.E. Miller
中科院分区：
文献类型：
--
作者：
A. Kleinsasser;W. H. Mallison;R.E. Miller
我们制作了Nb/AlN/subx//Nb约瑟夫森隧道结，目的是改善在高J/subc/范围内对临界电流密度J/subc/的控制，并探索具有低亚能隙准粒子电流的高J/subc/结的可能性。传统的Nb/AlO/subx//Nb结势垒是通过在Nb基电极上氧化一层薄的Al覆盖层来形成的，在低氧暴露下很难精确地控制氧化过程。Al与N/sub2/的反应性很低，因此使用N/sub2/等离子体形成了AlN/subx/势垒。报道了J/subc/高达4 mA//spl u/m/sup 2/的AlN/subx/势垒结的制备，并与类似J/subc/<；<；ETx>；
We have produced Nb/AlN/sub x//Nb Josephson tunnel junctions with the aims of improving the control of critical current density J/sub c/ in the high-J/sub c/ range and exploring the possibility of high-J/sub c/ junctions with low subgap quasiparticle currents. Conventional Nb/AlO/sub x//Nb junction barriers are formed by oxidizing a thin Al overlayer on the Nb base electrode, and precise control of the oxidation process is difficult at low levels of oxygen exposure. The reactivity of Al with N/sub 2/ is very low, and AlN/sub x/ barriers are therefore formed using an N/sub 2/ plasma. We report the fabrication of AlN/sub x/ barrier junctions with J/sub c/ as large as 4 mA//spl mu/m/sup 2/ and compare their properties to Nb/AlO/sub x//Nb ones of similar J/sub c/.<<ETX>>