Characterization of Fabry-Perot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy
Characterization of Fabry-Perot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy
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DOI：
10.1063/1.2787895
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发表时间：
2007-09-24
影响因子：
4
通讯作者：
Fukui, Takashi
中科院分区：
文献类型：
--
作者：
Hua, Bin;Motohisa, Junichi;Fukui, Takashi
作者介绍了通过选区金属有机气相外延制备的单根砷化镓纳米线中法布里-珀罗腔的形成。生长的具有六边形横截面的纳米线高度均匀且垂直取向。单根砷化镓纳米线的显微光致发光测量显示出强度的周期性峰值，这暗示了法布里-珀罗腔的纵向模式。空腔沿着纳米线的长度形成，两端的（111）面充当反射镜。此外，还观察到了砷化镓纳米线中的光波导。 (C) 2007 年美国物理研究所。
The authors present the formation of Fabry-Perot cavity in single GaAs nanowire prepared by selective-area metal organic vapor phase epitaxy. The grown nanowires with hexagonal cross section are highly uniform and vertically oriented. Microphotoluminescence measurements of single GaAs nanowire exhibit periodic peaks in the intensity, which are suggestive of the longitudinal modes of a Fabry-Perot cavity. The cavity is formed along the length of the nanowire and the (111) facets of both ends act as reflecting mirrors. Additionally, optical waveguides in GaAs nanowires were also observed. (C) 2007 American Institute of Physics.