Electrochemical Reduction of Silicon Tetrachloride in an Intermediate-Temperature Ionic Liquid
Electrochemical Reduction of Silicon Tetrachloride in an Intermediate-Temperature Ionic Liquid
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DOI：
10.5796/electrochemistry.77.683
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发表时间：
2009-08
期刊：
影响因子：
2.5
通讯作者：
Yusaku F. Nishimura;T. Nohira;T. Morioka;R. Hagiwara
中科院分区：
文献类型：
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作者：
Yusaku F. Nishimura;T. Nohira;T. Morioka;R. Hagiwara
在423 K等摩尔n -乙基- n -甲基吡咯吡啶-氯化锌熔体中研究了四氯化硅的电化学还原，以低成本生产硅薄膜。在0 V vs Zn(II)/Zn条件下恒电位电解，在电极-气-熔三相界面附近的Ni衬底上优先形成深棕色物质。能量色散x射线能谱和x射线光电子能谱表明，在该体系中，部分SiCl4被电化学还原为非晶态Si。通过扫描电镜对电沉积膜的横截面观察表明，本系统的沉积速率比我们之前研究的室温系统的沉积速率高约100倍。电极结构和sicl4供应方法的发明使得在几乎整个Ni衬底上电沉积含硅薄膜成为可能。
Electrochemical reduction of silicon tetrachloride has been investigated in an equimolar N-ethyl-N-methylpyrrolidinium chloride-zinc chloride melt at 423 K for low-cost production of silicon thin films. A dark-brown substance was formed preferentially on the Ni substrate near the electrode-gas-melt three-phase interface by potentiostatic electrolysis at 0 V vs Zn(II)/Zn. Both energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy suggested that some SiCl4 was electrochemically reduced to amorphous Si in the present system. Cross-sectional observation of electrodeposited films by scanning electron microscopy suggested that the deposition rate in the present system is about 100-fold higher than that in the room-temperature system investigated in our previous study. Contrivances of the electrode configuration and the SiCl4-supplying method enabled electrodepositing the Si-containing film on almost the whole Ni substrate.