Theory of shape stability in crystal growth from the melt
Theory of shape stability in crystal growth from the melt
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熔体晶体生长的形状稳定性理论
DOI：
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发表时间：
1976
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通讯作者：
T. Surek
中科院分区：
文献类型：
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作者：
T. Surek
本文提出了熔体晶体生长中晶体外形稳定性的判据。该标准认识到，通过弯月面控制工艺（例如直拉法、浮区法和边缘限定膜流生长（EFG））进行晶体的恒定横截面生长，要求弯月面与生长轴之间的角度φ等于φ0（一个常数;对于硅，φ0=11°）。形状稳定性进一步要求晶体形状的变化（每当φ≠φ0时）应使得作为形状变化的结果φ再次接近φ0。该标准适用于各种熔体生长技术; Czochralski生长显示出固有的不稳定性，而通常的浮区技术显示出提供晶体形状的稳定性。应用该判据对各种晶体形状的EFG生长，特别是对EFG硅带的生长进行了研究，并给出了在EFG中获得形状稳定的条件。
A criterion is presented for the stability of the external shape of the crystal in crystal growth from the melt. The criterion takes cognizance of the finding that the constant cross‐sectional growth of crystals by a meniscus‐controlled process, such as Czochralski, floating‐zone, and edge‐defined film‐fed growth (EFG), requires that the angle φ between the meniscus and the growth axis equal φ0 (a constant; for silicon, φ0=11°). Shape stability requires further that a change in crystal shape (whenever φ≠φ0) should be such that φ approaches φ0 again as a result of the shape change. The criterion is applied to the various melt‐growth techniques; Czochralski growth is shown to be inherently unstable, whereas the usual floating zone techniques are shown to provide stability of the crystal shape. An application of the criterion is made to the EFG growth of various crystal shapes, with particular emphasis on EFG silicon ribbon growth, and the conditions under which shape stabilization is obtained in EFG are ide...