Malter effect in thin ITO films
Malter effect in thin ITO films
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DOI：
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发表时间：
2009
期刊：
影响因子：
0.6
通讯作者：
J. Olesik;Z. Olesik
中科院分区：
文献类型：
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作者：
J. Olesik;Z. Olesik
研究的主题是场对玻璃表面沉积的 ITO 薄膜电子发射到真空的影响。将薄膜沉积在玻璃的两个表面上，并使用电场控制的马尔特效应进行检查。其中一层是场电极，另一层被视为电子发射器。将偏置电压施加到场电极。分析在 10 –5 Pa 的压力下进行。确定了二次发射系数对偏置电压和二次电子能量分布的依赖性。获得的图具有高度非单调行为的特征。在多通道幅度分析仪中记录电压脉冲幅度谱。已经发现脉冲计数以指数方式取决于偏置电压。同一感应场下的发射效率受测量前样品状态的影响。这意味着场致电子发射表现出类似磁滞的行为。这种效应的存在证明电场使电子发射ITO层发生一些不可逆的变化。
The subject of the study was field influence on electron emission into vacuum from ITO films deposited on glass surface. The films were deposited onto both surfaces of the glass and examined using the Malter effect controlled by electric field. One of the layers was the field electrode and the other was treated as the electron emitter. The bias voltage was applied to the field electrode. The analysis was carried out at a pressure of 10 –5 Pa. Dependences of the secondary emission coefficient on the bias voltage and energy distributions of secondary electrons were determined. The diagrams obtained are characterized by high non-monotonic behaviour. The voltage pulse amplitude spectra were recorded in the multichannel amplitude analyzer. It has been found that pulses count depends exponentially on the bias voltage. The emission efficiency at the same inducing field is affected by the state in which the sample was before the measurement. This means that the field induced electron emission shows hysteresis-like behaviour. The existence of this effect proves that the electric field causes some irreversible changes in the electron emitting ITO layer.