Morphology optimization for achieving air stable and high performance organic field effect transistors
Morphology optimization for achieving air stable and high performance organic field effect transistors
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DOI：
10.1016/j.orgel.2013.03.027
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发表时间：
2013-06
影响因子：
3.2
通讯作者：
Pramod Kumar;Akanksha Sharma;Sarita Yadav;Subhasis Ghosh
中科院分区：
文献类型：
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作者：
Pramod Kumar;Akanksha Sharma;Sarita Yadav;Subhasis Ghosh
为了开发大面积薄膜显示器、电子纸和电子涂料所需的全有机有源矩阵发光显示器，有机薄膜晶体管(OTFT)必须取代硅基薄膜晶体管。OTFT中最重要的问题是载流子迁移率低，在环境条件下稳定性差，这在很大程度上取决于有机薄膜如何在不同的衬底上生长。在这里，我们表明这两个问题是相关的，并可以通过某些表面形态来克服，而表面形态只能通过各向异性生长来实现。仔细控制不同的生长参数可以导致对薄膜形态的前所未有的控制，这种控制已经被证明是可逆的和可重复的。高温和低蒸发速率增加了分子的扩散迁移率，这是导致分子堆积到更高长度尺度的原因。通过精心选择温度和蒸发速率，生长出细长的棒状晶体，以获得高性能和稳定的薄膜晶体管。
To develop an all organic active matrix light emitting display required for large area thin display, electronic paper and electronic paints, Si-based thin film transistor has to be replaced with organic thin film transistor (OTFT). The most important issues in OTFT are the low charge carrier mobility and poor stability under ambient conditions, which critically depend on how organic thin films are grown on different substrates. Here we show that both these issues are correlated and can be overcome by certain surface morphology which can only be achieved through anisotropic growth. Careful control of different growth parameters can lead to unprecedented control on thin film morphology which has been shown to be engineered reversibly and reproducibly. High temperature and low evaporation rate increase the diffusive mobility of molecules, which are responsible for the stacking of molecules to higher length scales. By carefully choosing a temperature and evaporation rate, elongated rod-like grains were grown for achieving high performance and stable thin film transistors.