Distance dependence of atomic-resolution near-field imaging on α-Al2O3 (0001) surface with respect to surface photovoltage of silicon probe tip
Distance dependence of atomic-resolution near-field imaging on α-Al2O3 (0001) surface with respect to surface photovoltage of silicon probe tip
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DOI：
10.1007/s12274-015-0934-4
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发表时间：
2016-02
期刊：
影响因子：
9.9
通讯作者：
J. Yamanishi;T. Tokuyama;Y. Naitoh;Y. Li;Y. Sugawara
中科院分区：
文献类型：
--
作者：
J. Yamanishi;T. Tokuyama;Y. Naitoh;Y. Li;Y. Sugawara
最近，我们实现了原子分辨率的光学成像与近场扫描光学显微镜使用光子诱导力检测。在该技术中，硅尖尖端的表面光电压由表面上的光学近场引起的静电力测量。我们在棱镜的α-Al_2 O_3（0001）表面上实现了近场的原子分辨率成像。我们研究了近场的空间分布，通过扫描在不同的尖端样品的距离，发现原子的近场信号的原子散射观察到在更大的距离比原子力显微镜信号。随着针尖-样品距离的增加，近场的归一化信噪比逐渐下降，几乎是频移（Δf）的两倍。
Recently, we achieved atomic-resolution optical imaging with near-field scanning optical microscopy using photon-induced force detection. In this technique, the surface photovoltage of the silicon-tip apex induced by the optical near field on the surface is measured as the electrostatic force. We demonstrated atomicresolution imaging of the near field on theα-Al2O3(0001) surface of a prism. We investigated the spatial distribution of the near field by scanning at different tip-sample distances and found that the atomic corrugation of the near-field signal was observed at greater distances than that of the atomic force microscopy signal. As the tip-sample distance increased, the normalized signal-to-noise ratio of the near field is in a gradual decline almost twice that of the frequency shift (Δf).