Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers
Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers
复制标题
InAs/GaAs 自组织量子点激光器中的模态增益和激光态
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
J. Clark
中科院分区：
文献类型：
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作者：
P. Fry;L. Harris;S. Parnell;J. Finley;A. D. Ashmore;D. Mowbray;M. S. Skolnick;M. Hopkinson;G. Hill;J. Clark
InAs/GaAs 自组织量子点激光器的模态增益是通过法向入射带间光电流的测量来确定的。基态跃迁的最大模态增益值为 (7±3) cm−1，远小于同类量子阱激光器的典型值。光电流技术被证明是一种方便且简单的方法，用于确定增益的光谱形式并比较不同器件的模态增益。讨论了小模态增益对激光特性的影响。
The modal gain of an InAs/GaAs self-organized quantum dot laser is determined from a measurement of the normal incidence, interband photocurrent. The maximum modal gain of the ground state transition is shown to have a value of (7±3) cm−1, considerably smaller than typical values for comparable quantum well lasers. The photocurrent technique is demonstrated to be a convenient and simple method for determining the spectral form of the gain and for comparing the modal gain of different devices. The consequences of the small modal gain for the laser characteristics are discussed.