Non-Reciprocal Acoustic Transmission in a GaN Delay Line Using the Acoustoelectric Effect
Non-Reciprocal Acoustic Transmission in a GaN Delay Line Using the Acoustoelectric Effect
复制标题
利用声电效应的 GaN 延迟线中的不可逆声传输
DOI：
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发表时间：
2017
影响因子：
4.9
通讯作者：
M. Rais
中科院分区：
文献类型：
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作者：
Haoshen Zhu;M. Rais
本文首次演示了氮化镓(GaN)延迟线结构中的非互易声传输。通过施加直流电场穿过具有二维电子气(2DEG)片的有源区，观察到正向(S21)和反向(S12)传输的分裂。非互易性(~20.7分贝/毫米最大。在这封信中)通过调节栅极电压来耗尽2DEG片状载流子密度而变化，这与2DEG与表面声波之间相互作用的模型预测一致。我们的初步结果证明了在GaN平台上通过声电放大实现芯片级非互易声学器件的可行性。
This letter reports on first-time demonstration of non-reciprocal acoustic transmission in a gallium nitride (GaN) delay line structure. The split of forward (S21) and backward (S12) transmissions is observed by applying a dc electric field through the active area with a two-dimensional electron gas (2DEG) sheet. The non-reciprocity (~20.7 dB/mm max. in this letter) varies by tuning the gate voltage to deplete the 2DEG sheet carrier density, which agrees with model prediction for the interaction between 2DEG and surface acoustic waves. Our preliminary results prove the feasibility of implementing chip-scale non-reciprocal acoustic devices in a GaN platform through acoustoelectric amplification.