Electroluminescent Yb2O3:Er and Yb2Si2O7:Er nanolaminate films fabricated by atomic layer deposition on silicon
Electroluminescent Yb2O3:Er and Yb2Si2O7:Er nanolaminate films fabricated by atomic layer deposition on silicon
复制标题
通过硅原子层沉积制备电致发光 Yb2O3:Er 和 Yb2Si2O7:Er 纳米层压薄膜
DOI：
10.1016/j.optmat.2018.05.001
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发表时间：
2018-06-01
影响因子：
3.9
通讯作者：
Sun, Jiaming
中科院分区：
文献类型：
--
作者：
Ouyang, Zhongtao;Yang, Yang;Sun, Jiaming
采用原子层沉积法在硅衬底上制备了原子层掺杂的Yb_2O_3：Er和Yb_2Si_2O_7：Er纳米叠层薄膜，并将其用于金属氧化物半导体发光器件（MOSLED），获得了类似于1530 nm的电致发光。在1000 ℃以上退火后，Yb 2 O3薄膜转变为Yb 2Si 2 O 7相。Yb_2Si_2O_7薄膜的强发光证实了在光激发下的高效率和能量传递，但有限的电子传导限制了EL性能。来自Yb 2 O3：Er MOSLED的EL表现出色，呈现高达8.5%的外部量子效率和1 x 10（-3）的功率效率。在足够的偏压下，Er ~（3+）离子被Fowler-Nordheim隧穿机制产生的超热电子碰撞激发，从而产生电致发光。实验测得掺Er ~（3+）离子在纳米叠层Yb_2O_3基体中交叉弛豫的临界距离约为3 nm。这些器件显示了掺铒镱氧化物在硅基光电子学中的应用潜力。
Atomic layer doped Yb2O3:Er and Yb2Si2O7:Er nanolaminate films are fabricated on silicon by atomic layer deposition, and similar to 1530 nm electroluminescence (EL) is obtained from the metal-oxide-semiconductor light emitting devices (MOSLEDs) based on these films. The Yb2O3 films transfer to Yb2Si2O7 phase after annealing above 1000 degrees C. Intense photoluminescence from Yb2Si2O7 film confirms high efficiency and energy transfer under optical excitation, but the limited electron conduction restricts the EL performance. EL from the Yb2O3:Er MOSLED outperforms, presenting an external quantum efficiency up to 8.5% and the power efficiency of 1 x 10(-3). The EL is derived to result from the impact excitation of Er3+ ions by hot electrons, which stem from Fowler-Nordheim tunneling mechanism under sufficient bias voltage. The critical distance for the cross relaxation of doped Er3+ ions in nanolaminate Yb2O3 matrix is experimentally determined to be similar to 3nm. Such devices manifest the technological potential of Er-doped Yb-oxides for applications in silicon-based optoelectronics.