Effects of sulfurization time and H2S concentration on electrical properties of Cu2ZnSnS4 films prepared by sol-gel method
Effects of sulfurization time and H2S concentration on electrical properties of Cu2ZnSnS4 films prepared by sol-gel method
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硫化时间和H2S浓度对溶胶-凝胶法制备Cu2ZnSnS4薄膜电性能的影响
DOI：
10.1016/j.materresbull.2015.08.017
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发表时间：
2016
影响因子：
5.4
通讯作者：
Jia Hongjie
中科院分区：
文献类型：
--
作者：
Long Bo;Cheng Shuying;Zheng Qiao;Yu Jinling;Jia Hongjie
采用溶胶-凝胶法和硫化工艺制备了Cu 2 ZnSnS 4（CZTS）薄膜。通过改变硫化时间和H2S浓度，研究了薄膜的性能。X射线衍射和拉曼光谱分析表明，CZTS薄膜具有四方型锌黄锡矿结构。随着硫化时间和H2S浓度的增加，锌黄锡矿（1 1 2）峰的强度变得尖锐。CZTS薄膜的化学计量比与前驱体不同，这是由于在硫化过程中Sn的损失。随着硫化时间的延长，薄膜的电阻率和迁移率增大，载流子浓度降低。在5%H2S浓度下硫化90 min的CZTS薄膜具有最佳的光电性能，室温下Eg为1.41 eV，电阻率为3.64 Ω cm，载流子浓度为1.11 × 1018 cm − 3，迁移率为1.54 cm 2/（Vs）。
Cu2ZnSnS4(CZTS) thin films have been successfully deposited by a sol–gel method and sulfurization process. The properties of the films were investigated by varying sulfurization time and H2S concentration. X-ray diffraction and Raman spectra analyses revealed the formation of CZTS films with a tetragonal type kesterite structure. With increasing the sulfurization time and H2S concentration, the intensity of the kesterite (1 1 2) peak became sharper. The stoichiometric ratios of the CZTS films were different from the precursors, which was due to Sn loss during the sulfurization process. The electrical resistivity and mobility of the films increased while the carrier concentration decreased with increasing the sulfurization time. The CZTS thin films sulfurized at 5% H2S concentration for 90 min had the best opto-electrical properties withEgof 1.41 eV, resistivity of 3.64 Ω cm, carrier concentration of 1.11 × 1018cm−3and mobility of 1.54 cm2/(V s) at room temperature for PV application.