Quantum dots in graphene

Quantum dots in graphene
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DOI:
10.1103/physrevlett.98.016802
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发表时间:
2006-06
期刊:
--
影响因子:
--
通讯作者:
P.G.Silvestrov;K.B.Efetov
P.G.Silvestrov;K.B.Efetov
中科院分区:
其他
文献类型:
--
作者:
P.G.Silvestrov;K.B.Efetov

文献摘要

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我们提出了一种在石墨烯带的一个小区域中通过外部势来确定准粒子的方法。在这种情况下,电子的运动起着至关重要的作用。在不同边界条件下,对石墨烯量子点的性质进行了理论研究。(准)束缚态存在于所考虑的所有系统。同时,电导对栅极电压的依赖性携带关于边缘形状的信息。
We suggest a way of confining quasiparticles by an external potential in a small region of a graphene strip. Transversal electron motion plays a crucial role in this confinement. Properties of thus obtained graphene quantum dots are investigated theoretically for different types of the boundary conditions at the edges of the strip. The (quasi)bound states exist in all systems considered. At the same time, the dependence of the conductance on the gate voltage carries an information about the shape of the edges.