Remote Doping of Scalable Nanowire Branches
Remote Doping of Scalable Nanowire Branches
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DOI：
10.1021/acs.nanolett.0c00517
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发表时间：
2020-05-13
期刊：
影响因子：
10.8
通讯作者：
Morral, Anna Fontcuberta, I
中科院分区：
文献类型：
--
作者：
Friedl, Martin;Cerveny, Kris;Morral, Anna Fontcuberta, I
选择性区域外延提供了通向高晶体质量、可扩展、复杂纳米线网络的途径。这些高质量的网络可以用于拓扑量子计算以及超快光电探测方案。控制这些器件中的载流子密度和平均自由程是所有这些应用的关键。影响平均自由程的因素包括表面散射、施主散射、缺陷散射和杂质散射。在这里，我们演示了如何通过采用远程掺杂策略来减少InGaAs纳米线网络中的施主散射。低温磁输运测量表明弱反本地化-强自旋轨道相互作用的签名-跨越纳米线Y结。这项工作为量子技术实现远程掺杂、超洁净和可扩展的纳米线网络提供了蓝图。
Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier density and mean free path in these devices is key for all of these applications. Factors that affect the mean free path include scattering by surfaces, donors, defects, and impurities. Here, we demonstrate how to reduce donor scattering in InGaAs nanowire networks by adopting a remote-doping strategy. Low-temperature magnetotransport measurements indicate weak anti-localization-a signature of strong spin-orbit interaction-across a nanowire Y-junction. This work serves as a blueprint for achieving remotely doped, ultraclean, and scalable nanowire networks for quantum technologies.