Periodic indentation patterns fabricated on AlGaInP light emitting diodes and their effects on light extraction
Periodic indentation patterns fabricated on AlGaInP light emitting diodes and their effects on light extraction
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AlGaInP 发光二极管上的周期性压痕图案及其对光提取的影响
DOI：
10.1039/c4ra11390j
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发表时间：
2014-01-01
期刊：
影响因子：
3.9
通讯作者：
Xu, Xiangang
中科院分区：
文献类型：
--
作者：
Lin, Xiaoyu;Liu, Duo;Xu, Xiangang
我们报道了一种在AlGaInP发光二极管（led）上制造周期性压痕图案的新方法，该方法可以有效地提高光提取效率。图案由半球形凹坑组成，这些凹坑是通过直接用图案蓝宝石（PS）压印AlGaInP led的顶部GaP窗口层而产生的。角度分辨电致发光测试表明，图像化芯片的平均发光强度比原平面芯片提高了155%。
We report a novel method for fabricating periodic indentation patterns on AlGaInP light emitting diodes (LEDs) that can effectively improve the light extraction efficiency. The patterns consist of hemispherical pits created by directly imprinting the top GaP window layer of AlGaInP LEDs with patterned sapphire (PS). The angle resolved electroluminescence tests reveal that the patterned chips show an average light emission enhancement of 155% over the original planar chips.