Layout decomposition for double patterning lithography
Layout decomposition for double patterning lithography
复制标题
DOI：
10.1109/iccad.2008.4681616
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
A. Kahng;Chul-Hong Park;Xu Xu-Xu;Hailong Yao
中科院分区：
文献类型：
--
作者：
A. Kahng;Chul-Hong Park;Xu Xu-Xu;Hailong Yao
在45 nm及以下工艺节点的双重图案化光刻（DPL）布局分解中，如果两个特征的间距小于最小着色间距，则必须为它们分配相反的颜色（对应于不同的曝光）[11，9，5]。然而，存在这样的图案配置，对于该图案配置，由小于最小颜色间距分开的图案特征不能被分配不同的颜色。在这种情况下，DPL要求将布局特征拆分为两个部分。我们解决这个问题，使用布局分解算法，包括图形构造，冲突周期检测，和节点分裂过程。我们评估我们的技术在45纳米技术的真实世界和人工生成的测试用例。实验结果表明，我们提出的布局分解方法有效地分解给定的布局，以满足最小化线结束和最大化重叠余量的关键目标。在最终的分解布局中没有设计规则冲突。
In double patterning lithography (DPL) layout decomposition for 45 nm and below process nodes, two features must be assigned opposite colors (corresponding to different exposures) if their spacing is less than the minimum coloring spacing [11, 9, 5]. However, there exist pattern configurations for which pattern features separated by less than the minimum color spacing cannot be assigned different colors. In such cases, DPL requires that a layout feature be split into two parts. We address this problem using a layout decomposition algorithm that includes graph construction, conflict cycle detection, and node splitting processes. We evaluate our technique on both real-world and artificially generated test cases in 45 nm technology. Experimental results show that our proposed layout decomposition method effectively decomposes given layouts to satisfy the key goals of minimized line-ends and maximized overlap margin. There are no design rule violations in the final decomposed layout.