Switching kinetics of SiC resistive memory for harsh environments
Switching kinetics of SiC resistive memory for harsh environments
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DOI：
10.1063/1.4926674
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发表时间：
2015-07-01
期刊：
影响因子：
1.6
通讯作者：
de Groot, C. H.
中科院分区：
文献类型：
--
作者：
Morgan, K. A.;Fan, J.;de Groot, C. H.
使用电压脉冲测量Cu/a-SiC/Au电阻性存储器单元，并且其表现出对于任何电阻性存储器记录的最高罗夫/罗恩比率。开关动力学的研究和拟合的数值模型，使用导热系数和电阻率特性的电介质。发现Cu/a-SiC/Au存储器单元的SET机制是由于离子运动而没有焦耳热贡献，而SET机制被发现是由于热辅助离子运动。导电丝的直径被提取为约4 nm。Cu/a-SiC/Au存储单元的高热导率和电阻率导致慢开关，但具有高的热可靠性和稳定性，显示出在恶劣环境中使用的潜力。研究了SiC存储单元的辐射特性。在DC扫描或脉冲开关中没有看到任何变化，也没有在导电机制，高达2 Mrad（Si），使用Co-60伽马辐照。(C)2015年作者。
Cu/a-SiC/Au resistive memory cells are measured using voltage pulses and exhibit the highest ROFF/RON ratio recorded for any resistive memory. The switching kinetics are investigated and fitted to a numerical model, using thermal conductivity and resistivity properties of the dielectric. The SET mechanism of the Cu/a-SiC/Au memory cells is found to be due to ionic motion without joule heating contributions, whereas the RESET mechanism is found to be due to thermally assisted ionic motion. The conductive filament diameter is extracted to be around 4nm. The high thermal conductivity and resistivity for the Cu/a-SiC/Au memory cells result in slow switching but with high thermal reliability and stability, showing potential for use in harsh environments. Radiation properties of SiC memory cells are investigated. No change was seen in DC sweep or pulsed switching nor in conductive mechanisms, up to 2Mrad(Si) using Co-60 gamma irradiation. (C) 2015 Author(s).