Anomalous Behavior in Electrical Transport Properties in Single-Crystal Gd $_{5}$ Si $_{1.8}$ Ge $_{2.2}$ and Polycrystalline Gd $_{5}$ Si $_{2.09}$ Ge $_{1.91}$
Anomalous Behavior in Electrical Transport Properties in Single-Crystal Gd $_{5}$ Si $_{1.8}$ Ge $_{2.2}$ and Polycrystalline Gd $_{5}$ Si $_{2.09}$ Ge $_{1.91}$
复制标题
单晶 Gd $_{5}$ Si $_{1.8}$ Ge $_{2.2}$ 和多晶 Gd $_{5}$ Si $_{2.09}$ Ge $_ 中电输运特性的异常行为
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
D. Jiles
中科院分区：
文献类型：
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作者：
R. Hadimani;Y. Melikhov;J. Snyder;D. Jiles
Gd5(SixGe1-x)4在接近一阶相变温度的电阻率测量中表现出异常行为。在本文中，我们提出了一系列电阻率作为温度测量的函数，表明电阻率的不可逆变化。单晶Gd5Si1.8Ge2.2（x=0.45）和多晶Gd5 Si2.09 Ge1.91（x=0.522）的电阻率随一阶相变次数的增加而增加。在220 K下绘制了单晶Gd5 Si1.8 Ge2.2的磁滞回线。在220 K下测量了几次磁滞回线，每次测量之间的温度在220到300 K之间循环。当样品经过一阶相变时，样品的矫顽力不可逆地增大。在第4和第5个热循环中矫顽力增加了20 Oe，然后在15个热循环中保持不变。
Gd5(SixGe1-x)4 exhibits anomalous behavior in resistivity measurement close to its first-order phase transition temperature. In this paper, we present a series of resistivity as a function of temperature measurements indicating an irreversible change in the resistivity. The resistivity of the sample increased every time the sample was passed through first-order phase transition for both single-crystal Gd5Si1.8Ge2.2(x=0.45) and polycrystalline Gd5 Si2.09 Ge1.91(x=0.522). Magnetic hysteresis loops were also plotted for the single-crystal Gd5 Si1.8 Ge2.2 at 220 K. The hysteresis loops were measured several times at 220 K, cycling the temperature between 220 and 300 K between each measurement. The coercivity of the sample increased irreversibly when the sample was passed through the first-order phase transition. The increase in the coercivity was 20 Oe for the fourth and fifth thermal cycles and then it remained constant up to 15 thermal cycles.