Interfaces in Mo/Si multilayers
Interfaces in Mo/Si multilayers
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DOI：
10.1117/12.23177
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发表时间：
1991-02
期刊：
影响因子：
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通讯作者：
J. Slaughter;P. Kearney;D. W. Schulze;C. Falco;C. R. Hills;E. B. Saloman;R. Watts
中科院分区：
文献类型：
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作者：
J. Slaughter;P. Kearney;D. W. Schulze;C. Falco;C. R. Hills;E. B. Saloman;R. Watts
利用先进的仪器和电子显微镜，对超高真空电子束蒸发和溅射制备的Mo/Si多层膜反射镜的界面进行了研究。在低至50℃的生长温度下，XPS谱出现了峰位移位，表明界面处形成了硅化物。电子显微镜照片表明，在多层膜中，大部分硅化物形成在Si界面上的Mo处，而不是Mo上的Si界面上。在300℃时，多层结构几乎完全被反应破坏。A(Mo)约为40A的样品比d(Mo)约为55A的样品表现更好。俄歇深度分布表明，溅射样品和200℃蒸发样品中的氧吸收仅限于最上面的Mo层，而在200℃以下蒸发的样品至少有氧透过前几层，这表明硅化物层是氧的扩散屏障。
Using state-of-the-art instruments and electron microscopy, the interfaces in Mo/Si multilayer mirrors fabricated by UHV electron-beam evaporation and by sputtering were examined. Peak shifts were observed in the XPS spectra at growth temperatures as low as 50 C, indicating the formation of silicide at the interface. The TEM micrographs showed that, in multilayers, the majority of the silicide formed at Mo on Si interfaces, rather than at Si on Mo interfaces. At 300 C, the multilayer structure is almost completely destroyed by the reaction. Mirrors with d(Mo) of about 40 A performed much better than those with d(Mo) of about 55 A. The Auger depth profiles showed that oxygen uptake in the sputtered samples and in samples evaporated at 200 C is limited to the top Mo layer, while samples evaporated at temperatures below 200 C had oxygen penetration through at least the first few bilayers, indicating that the silicide layers act as diffusion barriers to the oxygen.