Semiconductor saturable absorber mirror structures with low saturation fluence
Semiconductor saturable absorber mirror structures with low saturation fluence
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DOI:
10.1007/s00340-005-1879-1
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发表时间:
2005-06
期刊:
影响因子:
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通讯作者:
G. Spühler;K. Weingarten;R. Grange;L. Krainer;M. Haiml;V. Liverini;M. Golling;S. Schön;U. Keller-U.
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文献类型:
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作者:
G. Spühler;K. Weingarten;R. Grange;L. Krainer;M. Haiml;V. Liverini;M. Golling;S. Schön;U. Keller-U.
We present two novel semiconductor saturable absorber mirror (SESAM) designs which can exhibit more than ten times lower saturation fluence than classical SESAM devices. Design considerations and characterization data are presented. These devices are particularly suited for passively mode-locked lasers with ultra-high repetition rates.